Method of cleaning a chamber of a CVD machine and elements within

The present invention provides a method of cleaning a chamber of a CVD machine and elements within. A gas mixture of carbon tetrafluoride (CF4) and perfluoro ethane (C2F6) is first injected into the chamber. After performing a surface treatment, comprising a sandblasting step or a polishing step, on...

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Bibliographische Detailangaben
Hauptverfasser:	YAO CHENG-YUAN, LEE WEI-HAO, CHUNG PINGUNG, CHU TSANI, WANG WEI-HSU
Format:	Patent
Sprache:	eng
Schlagworte:	ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES CANDLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DETERGENT COMPOSITIONS DETERGENTS DIFFUSION TREATMENT OF METALLIC MATERIAL FATTY ACIDS THEREFROM INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY RECOVERY OF GLYCEROL RESIN SOAPS SOAP OR SOAP-MAKING SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION USE OF SINGLE SUBSTANCES AS DETERGENTS
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Beschreibung
Zusammenfassung:	The present invention provides a method of cleaning a chamber of a CVD machine and elements within. A gas mixture of carbon tetrafluoride (CF4) and perfluoro ethane (C2F6) is first injected into the chamber. After performing a surface treatment, comprising a sandblasting step or a polishing step, on the surfaces of the elements, the elements are then immersed in a cleaning solution, comprising at least ammonia water (NH4OH) and hydrogen peroxide (H2O2) at a temperature maintained between 40° C. to 70° C. Finally, the temperature of the cleaning solution is raised so that the residual layer on the surface of the elements can drop from the surfaces of the heater and the process kits or dissolve into the cleaning solution.