Method for preventing Cu CMP corrosion

A method for preventing or reducing corrosion of copper containing semiconductor features during chemical mechanical polishing (CMP) including providing a semiconductor wafer polishing surface including a copper layer overlying a copper filled anisotropically etched feature; polishing the semiconductor wafer polishing surface according to a first CMP process to remove at least a portion the copper layer to reveal a portion of an underlying barrier/adhesion layer; polishing the semiconductor wafer polishing surface according to a second CMP process including applying a neutralizing solution; polishing the semiconductor wafer polishing surface according to a third CMP process including applying a copper corrosion inhibitor solution; and, polishing the semiconductor wafer polishing surface according to at least a fourth CMP process to remove a remaining portion of the underlying barrier/adhesion layer.