Optically nonlinear semiconductor material and a method for the production thereof

Essentially non-linear optical material characteristics of a semiconductor material grown at low temperatures can be significantly improved by the following measures: Doping with foreign atoms and/or additional thermal annealing. If, for example GaAs grown at 300° C. is doped with Be to a concentrat...

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Bibliographische Detailangaben
Hauptverfasser: HAIML MARKUS, SIEGNER UWE, KELLER URSULA
Format: Patent
Sprache:eng
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