Optically nonlinear semiconductor material and a method for the production thereof
Essentially non-linear optical material characteristics of a semiconductor material grown at low temperatures can be significantly improved by the following measures: Doping with foreign atoms and/or additional thermal annealing. If, for example GaAs grown at 300° C. is doped with Be to a concentrat...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!