Optically nonlinear semiconductor material and a method for the production thereof

Essentially non-linear optical material characteristics of a semiconductor material grown at low temperatures can be significantly improved by the following measures: Doping with foreign atoms and/or additional thermal annealing. If, for example GaAs grown at 300° C. is doped with Be to a concentrat...

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Hauptverfasser:	HAIML MARKUS, SIEGNER UWE, KELLER URSULA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DEVICES USING STIMULATED EMISSION ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	Essentially non-linear optical material characteristics of a semiconductor material grown at low temperatures can be significantly improved by the following measures: Doping with foreign atoms and/or additional thermal annealing. If, for example GaAs grown at 300° C. is doped with Be to a concentration of 3.1019 cm-3, then the response time is reduced from 480 fs (curve 1.1) to 110 fs (curve 3.1), without the absorption modulation being reduced by this or the non-saturable absorption losses being increased. Semiconductor materials, during the production of which at least one of the above measures was implemented, manifest influenceable, in particular short response times as well as simultaneously high absorption modulations and low non-saturable absorption losses. For this reason, they are eminently suitable for non-linear optical applications, such as optical information processing, optical communication or ultrashort laser pulse physics.