Simultaneous formation of deep trench capacitor and resistor

A compact resistor is formed in an integrated circuit using many of the same steps as are employed in forming a trench capacitor for a DRAM cell; in particular depositing a layer of heavily doped germanium in the trench interior after the step of doping the substrate to form the bottom plate for the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MCSTAY IRENE L, CHAKRAVARTI SATYA N, WONG KWONG HON, CHAKRAVARTI ASHIMA B
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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