Methods and devices utilizing the ammonium termination of silicon dioxide films

The present invention is a novel termination of silicon dioxide films for use in a single wafer cleaning tool. According to the present invention a silicon dioxide film is formed on a silicon substrate and the film is then terminated with ammonium oxide (-O-NH4). In an embodiment of the present inve...

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Bibliographische Detailangaben
Hauptverfasser:	VERHAVERBEKE STEVEN, TRUMAN J. KELLY
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention is a novel termination of silicon dioxide films for use in a single wafer cleaning tool. According to the present invention a silicon dioxide film is formed on a silicon substrate and the film is then terminated with ammonium oxide (-O-NH4). In an embodiment of the present invention the film is terminated by dispensing a mixture containing ammonium oxide onto the film. The present invention also provides a method of forming a gate insulator as well as a gate insulator device.