Deeply doped source/drains for reduction of silicide/silicon interface roughness

Metal silicides form low resistance contacts on semiconductor devices such as transistors. Rough interfaces are formed between metal silicide contacts, such as NiSi and the source/drain regions of a transistor, such as doped source/drain regions. Interfaces with a high degree of roughness result in increased spiking and junction leakage. Interface roughness is minimized by deeply doping the source/drain regions of a silicon on insulator substrate.