Methods to control the threshold voltage of a deep trench corner device
A method of manufacturing a semiconductor trench device comprises forming a dielectric on a substrate, the dielectric having an underlying oxide layer adjacent the substrate, etching a trench in the dielectric and the substrate, forming a recess in the underlying oxide layer, filling the recess with...
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| creator | GOTH GEORGE R ALSMEIER JOHANN PARRIES PAUL C NASTASI VICTOR R LEVY MAX G O'NEILL JAMES A |
| description | A method of manufacturing a semiconductor trench device comprises forming a dielectric on a substrate, the dielectric having an underlying oxide layer adjacent the substrate, etching a trench in the dielectric and the substrate, forming a recess in the underlying oxide layer, filling the recess with a nitride plug, filling the trench a conductive material and oxidizing the dielectric and the conductive material, wherein the nitride plug controls a shape of a corner of the trench. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Methods to control the threshold voltage of a deep trench corner device |
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