Methods to control the threshold voltage of a deep trench corner device

Methods to control the threshold voltage of a deep trench corner device

A method of manufacturing a semiconductor trench device comprises forming a dielectric on a substrate, the dielectric having an underlying oxide layer adjacent the substrate, etching a trench in the dielectric and the substrate, forming a recess in the underlying oxide layer, filling the recess with...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: GOTH GEORGE R, ALSMEIER JOHANN, PARRIES PAUL C, NASTASI VICTOR R, LEVY MAX G, O'NEILL JAMES A
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method of manufacturing a semiconductor trench device comprises forming a dielectric on a substrate, the dielectric having an underlying oxide layer adjacent the substrate, etching a trench in the dielectric and the substrate, forming a recess in the underlying oxide layer, filling the recess with a nitride plug, filling the trench a conductive material and oxidizing the dielectric and the conductive material, wherein the nitride plug controls a shape of a corner of the trench.