Methods of producing strained microelectronic and/or optical integrated and discrete devices

Methods of producing strained microelectronic and/or optical integrated and discrete devices

A new method of producing strained crystalline semiconductor microelectronic devices. Microelectronic devices can either be formed within a membrane, prior to straining or processed after straining. The method includes the steps of straining a membrane along at least one axis and straining using waf...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: BELFORD RONA ELIZABETH
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
SEMICONDUCTOR DEVICES
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:A new method of producing strained crystalline semiconductor microelectronic devices. Microelectronic devices can either be formed within a membrane, prior to straining or processed after straining. The method includes the steps of straining a membrane along at least one axis and straining using wafer-bonding techniques.