Semiconductor memory device

Semiconductor memory device

A semiconductor memory device is constituted by forming two types of insulation films on the channel of an MOS transistor on which a vertical type another MOS transistor using the control gate of the MOS transistor as a substrate is stacked. Thus, a non-volatile semiconductor memory device small in...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KATAYAMA KOZO, HISAMOTO DAI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:A semiconductor memory device is constituted by forming two types of insulation films on the channel of an MOS transistor on which a vertical type another MOS transistor using the control gate of the MOS transistor as a substrate is stacked. Thus, a non-volatile semiconductor memory device small in size, having high reliability, high density, excellent fatigue and a random access function can be provided.