Method for the growing of single crystals

To obtain large, high-quality crystals of a metal orthophosphate, in particular GaPO4 or AlPO4, from a nutrient solution with the use of seeds, a seed crystal is used having at least two rod- or wafer-shaped legs which form an angle with each other and define a main growth region, and which are posi...

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Bibliographische Detailangaben
Hauptverfasser:	WALLNOEFER WOLFGANG, THANNER HERBERT, KRISPEL FERDINAND, KREMPL PETER
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	To obtain large, high-quality crystals of a metal orthophosphate, in particular GaPO4 or AlPO4, from a nutrient solution with the use of seeds, a seed crystal is used having at least two rod- or wafer-shaped legs which form an angle with each other and define a main growth region, and which are positioned eccentrically in the single crystal grown. Contagious faces of two seed legs, which have been chosen for crystal growing, enclose an angle