Semiconductor device as an object of thickness reduction

There is provided a semiconductor device which comprises electrode pads formed on an insulating film on a semiconductor substrate, an insulating cover film formed on the insulating film to have openings that expose the electrode pads, and a masking tape having a base material layer and a resist laye...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MURATA KOICHI, WATANABE EIJI, MAKINO YUTAKA, ISHIGURI MASAHIKO
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:There is provided a semiconductor device which comprises electrode pads formed on an insulating film on a semiconductor substrate, an insulating cover film formed on the insulating film to have openings that expose the electrode pads, and a masking tape having a base material layer and a resist layer coated on the base material layer, and for covering an upper surface of the cover film and inner surfaces of the openings in a situation that the resist layer is directed toward a semiconductor substrate side. Accordingly, it is possible to improve a throughput in a series of steps of grinding/polishing the semiconductor substrate and forming the bump electrodes which are required to thin the substrate of the semiconductor device.