Semiconductor device as an object of thickness reduction
There is provided a semiconductor device which comprises electrode pads formed on an insulating film on a semiconductor substrate, an insulating cover film formed on the insulating film to have openings that expose the electrode pads, and a masking tape having a base material layer and a resist laye...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | There is provided a semiconductor device which comprises electrode pads formed on an insulating film on a semiconductor substrate, an insulating cover film formed on the insulating film to have openings that expose the electrode pads, and a masking tape having a base material layer and a resist layer coated on the base material layer, and for covering an upper surface of the cover film and inner surfaces of the openings in a situation that the resist layer is directed toward a semiconductor substrate side. Accordingly, it is possible to improve a throughput in a series of steps of grinding/polishing the semiconductor substrate and forming the bump electrodes which are required to thin the substrate of the semiconductor device. |
---|