Method for manufacturing laser diode chip, optical transmitting/receiving module and method for aligning positions thereof

An optical structure and a method of manufacturing a laser diode chip. The optical structure includes a silicon substrate, an optical fiber fixed to that substrate, and a laser diode chip. Grooves are formed in the optical fiber and the laser diode chip. Those grooves are used for aligning and positioning the optical fiber relative to the laser diode chip. The laser diode chip is manufactured by vapor-depositing a nitride thin film (Si3N4) on a laminated wafer comprised of n-type InP layers, p-type Inp layers, and InGaAs layer. Then, etching an InGaAs layer using a solution of sulfuric acid, hydrogen peroxide, and distilled water after opening an etching window to form a V-mesa and V-grooves; etching an InP layer using a hydrochloric acid solution; vapor-depositing a nitride thin film (SiNx), opening an electrode forming window to form electrodes on the wafer, and forming p-type and n-type electrodes the wafer.