Ultra thin, single phase, diffusion barrier for metal conductors

Ultra thin, single phase, diffusion barrier for metal conductors

The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition p...

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Bibliographische Detailangaben
Hauptverfasser: MCFEELY FENTON R, RODBELL KENNETH P, NOYAN CEVDET I, COHEN STEPHAN A, ROSENBERG ROBERT, YURKAS JOHN J
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.