Method for forming an EEPROM cell together with transistor for peripheral circuits

A method for forming an EEPROM cell together with transistors for peripheral circuits is disclosed. The method results in having a predetermined amount of material remaining proximate to the edge of the electrode, thereby forming a structure that extends a short distance beyond the sides of the electrode. An additional method for forming an trilayer EEPROM cell together with transistors for peripheral circuits is also disclosed, which results trilayer layer being restricted to covering the electrode and a small proximate region extending over the substrate surface. Two shoulders may also be etched into the sidewalls of the oxide layer which lie along the edges of said electrode.