Power supply circuit and method

An integrated power supply (106) is formed on a semiconductor substrate (200). A first switch (150) is formed in a well region (155) of the semiconductor substrate to have a conduction path (211) for coupling a supply voltage (VBAT) to a node (116). A second switch (152) operates in response to a fi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: BAYADROUN ABDESSELAM
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An integrated power supply (106) is formed on a semiconductor substrate (200). A first switch (150) is formed in a well region (155) of the semiconductor substrate to have a conduction path (211) for coupling a supply voltage (VBAT) to a node (116). A second switch (152) operates in response to a first control signal (COMP) for coupling the node to the well region when a potential of the node is greater than the supply voltage.