Low temperature plasma strip process

A method for plasma stripping a defective resist from a wafer that significantly reduces formation of residue between metal lines caused by conventional plasma stripping methodology and eliminates bridging, short-circuiting, and device failure caused thereby. The method includes locating a wafer in a chamber having a platen, reducing a pressure in the chamber to a predetermined pressure, and placing the wafer in contact with the platen to heat the wafer. In the method, the wafer is heated to a temperature below approximately 210° C. and is then moved away from the platen while the wafer temperature is below approximately 210° C. Plasma stripping a resist layer is then performed while maintaining the wafer temperature below approximately 210° C. By maintaining the temperature of the wafer below approximately 210° C., residue formation is substantially prevented and product yield is improved.