Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength

A reflective mask is described having non-reflective and reflective regions, where the reflective regions are reflective of a first light that has an inspection wavelength and are reflective of a second light that has a semiconductor processing exposure wavelength. The non-reflective regions are les...

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Bibliographische Detailangaben
Hauptverfasser:	STIVERS ALAN R, TEJNIL EDITA
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS THEREFOR MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY NUCLEAR ENGINEERING NUCLEAR PHYSICS ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR TRANSPORTING
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Beschreibung
Zusammenfassung:	A reflective mask is described having non-reflective and reflective regions, where the reflective regions are reflective of a first light that has an inspection wavelength and are reflective of a second light that has a semiconductor processing exposure wavelength. The non-reflective regions are less reflective of the first light and the second light than the reflective regions in order to create: 1) a first image with a contrast greater than 0.210 and that is formed by reflecting the first light off of the reflective mask; and 2) a second image with a contrast greater than 0.750 and that is formed by reflecting the second light off of the reflective mask.