Method of formation of a capacitor on an integrated circuit

Method of formation of a capacitor on an integrated circuit

A method of manufacturing a capacitor includes the steps of depositing a first metal level and etching it to leave in place a region corresponding to a first plate of a capacitor and an area of contact with an upper level; depositing an insulating layer; forming a first opening above the first capac...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: BANVILLET HENRI, GUELEN JOS, LUNARDI GENEVI VE, OBERLIN JEAN-CLAUDE, MOURIER JOCELYNE, MADDALON CATHERINE, GRIS YVON, TROILLARD GERMAINE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of manufacturing a capacitor includes the steps of depositing a first metal level and etching it to leave in place a region corresponding to a first plate of a capacitor and an area of contact with an upper level; depositing an insulating layer; forming a first opening above the first capacitor plate; depositing a thin insulating layer; forming a second opening above the contact area; depositing a second metal level; removing by physico-chemical etching the second metal layer outside regions where it fills up the openings; and depositing a third metal level and leaving in place portions thereof.