Method for processing semiconductor material

A method is for processing semiconductor material, in which one or more shock waves generated using a transducer are transmitted through a liquid medium to semiconductor material in rod form. The transducer is at a distance of from 1 cm to 100 cm from the semiconductor material, and the shock waves...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	FLOTTMANN DIRK, SCHANTZ MATTHAEUS
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRUSHING, PULVERISING, OR DISINTEGRATING CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL CRYSTAL GROWTH METALLURGY MILLING GRAIN PERFORMING OPERATIONS PREPARATORY TREATMENT OF GRAIN FOR MILLING PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WORKING CEMENT, CLAY, OR STONE WORKING STONE OR STONE-LIKE MATERIALS
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Beschreibung
Zusammenfassung:	A method is for processing semiconductor material, in which one or more shock waves generated using a transducer are transmitted through a liquid medium to semiconductor material in rod form. The transducer is at a distance of from 1 cm to 100 cm from the semiconductor material, and the shock waves have a pulse energy of from 1 to 20 kJ and a pulse rise time to the energy maximum of from 1 to 5 mus.