Process of heat treating and annealing CIC and CIC created thereby

Processes for preparing copper-INVAR-copper (CIC) for use in making chip packaging and the CIC created. One process comprises annealing a CIC section at a temperature in a range of 1475° F. to 1625° F. for a time in a range of 40 to 120 seconds. Another process includes heat treating a CIC section a...

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Hauptverfasser:	JAPP ROBERT M, MCCLURE BONNIE S, JIMAREZ LISA J
Format:	Patent
Sprache:	eng
Schlagworte:	CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMISTRY ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUSMETALS OR ALLOYS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MAKING METAL MALLEABLE BY DECARBURISATION, TEMPERING OR OTHERTREATMENTS MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY METALLURGY OF IRON MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS PERFORMING OPERATIONS PRINTED CIRCUITS TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS TRANSPORTING
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Beschreibung
Zusammenfassung:	Processes for preparing copper-INVAR-copper (CIC) for use in making chip packaging and the CIC created. One process comprises annealing a CIC section at a temperature in a range of 1475° F. to 1625° F. for a time in a range of 40 to 120 seconds. Another process includes heat treating a CIC section at a temperature in a range of 1275° F. to 1425° F. for a time in a range of 40 to 120 seconds. The above processes can be combined. The CIC section created exhibits unique electrical, physical, and mechanical properties.