Method of making a keeper layer for a spin valve sensor with low intrinsic anisotropy field

A method of making a keeper layer for a spin valve sensor sputter deposits a layer of cobalt iron niobium hafnium (CoFeNbHf) in the presence of a first magnetic field that is in a first direction, the CoFeNbHf keeper layer is then first annealed in the presence of a second field that is in a second direction and the keeper layer is then subsequently second annealed in the presence of a third field that is in a third direction. The first direction is preferably perpendicular to an air bearing surface of a read head employing the spin valve sensor and the third direction is preferably parallel to the first direction. The second direction is preferably perpendicular to the first direction. This method of making significantly reduces the intrinsic anisotropy (HK) of the keeper layer and also stabilizes the magnetic moment of the keeper layer in a direction which is perpendicular to the ABS.