Structures containing quantum conductive barrier layers

Structures containing quantum conductive barrier layers

Improved reliability structures containing quantum conductive barrier layer structures are obtained by employing quantum conductive layers in combination with thin regions of amorphous or microcrystalline semiconductor material. The quantum conductive structures are especially useful when incorporat...

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Bibliographische Detailangaben
Hauptverfasser: BUCHET CORINNE, CHALOUX SUSAN E, AUSSILHOU CAROLINE, JAMMY RAJARAO, ROUSSEAU JEAN-MARC, GREER HEIDI L, RAFFIN PATRICK, RODIER FRANCIS
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Improved reliability structures containing quantum conductive barrier layer structures are obtained by employing quantum conductive layers in combination with thin regions of amorphous or microcrystalline semiconductor material. The quantum conductive structures are especially useful when incorporated into trench capacitors to reduce or eliminate the occurrence of low temperature fails and single cell fails in DRAM circuits.