Superconductor structure with glass substrate and high-temperature superconductor deposited thereon, current limiter device having the superconductor structure and process for producing the structure

A superconductor structure inclludes a substrate made from a temperature-resistant glass material, a buffer layer which has been deposited on the substrate, and a layer of a metal oxide high Tc superconductor material that has been deposited thereon. A glass material with a coefficient of thermal ex...

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Bibliographische Detailangaben
1. Verfasser:	NIES RAINER
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CABLES CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY CONDUCTORS CRYSTAL GROWTH ELECTRICITY GLASS INSULATORS JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A superconductor structure inclludes a substrate made from a temperature-resistant glass material, a buffer layer which has been deposited on the substrate, and a layer of a metal oxide high Tc superconductor material that has been deposited thereon. A glass material with a coefficient of thermal expansion of over 6.10-6 K-1 and a transformation temperature of over 550° C. is to be provided. At least a deposition process in which a maximum temperature is at most 100 K higher than the transformation temperature of the glass material is selected for the production of the structure. A current limiter device is also provided.