Method of forming four transistor SRAM cell having a resistor

A device structure and a method of forming the structure comprising a resistor in a via opening between adjacent levels of metallization of a conventional field effect transistor (FET) by using amphorous (alpha) silicon between metal barrier layers, such as titanium tungsten and titanium nitride, at the via opening which is filled with a conductive material, such as tungsten said device structure and method enabling a conventional FET and resistor to only take the space of a conventional FET due to the unique properties of alpha-silicon.