Method of fabrication of a microstructure having an internal cavity

A method of fabricating a microstructure having an inside cavity. The method includes depositing a first layer or a first stack of layers in a substantially closed geometric configuration on a first substrate. Then, performing an indent on the first layer or on the top layer of said first stack of l...

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Bibliographische Detailangaben
Hauptverfasser:	TILMANS HENDRIKUS A. C, VAN DE PEER MYRIAM, BEYNE ERIC
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY COLORIMETRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC SWITCHES ELECTRICITY EMERGENCY PROTECTIVE DEVICES IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS RADIATION PYROMETRY RELAYS RESONATORS SELECTORS SEMICONDUCTOR DEVICES TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	A method of fabricating a microstructure having an inside cavity. The method includes depositing a first layer or a first stack of layers in a substantially closed geometric configuration on a first substrate. Then, performing an indent on the first layer or on the top layer of said first stack of layers. Then, depositing a second layer or a second stack of layers substantially with said substantially closed geometric configuration on a second substrate. Then, aligning and bonding said first substrate on said second substrate such that a microstructure having a cavity is formed according to said closed geometry configuration.