Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material

A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains acid labile groups either pendant to the polymer or to a dissolution inhibitor that is combined with the polymer. The acid labile groups significantly decrease the solubility of the polymer in a solution of aqueous base. The resist material also contains a photoacid generator and a radical scavenger. The radical scavenger reduces the amount of aromatic compounds outgassed from the resist during the lithographic process. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.