Process and arrangement for heat treatment of two-dimensional objects

The invention relates to a process for heat treatment of two-dimensional objects such as semiconductor wafers, for example in the form of silicon wafers, where the objects are arranged on supports and are conveyed through a heating unit, in particular continuously. To achieve a targeted treatment of...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	ROTH PETER, HEYER FRITZ
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	The invention relates to a process for heat treatment of two-dimensional objects such as semiconductor wafers, for example in the form of silicon wafers, where the objects are arranged on supports and are conveyed through a heating unit, in particular continuously. To achieve a targeted treatment of a two-dimensional object, in particular of a semiconductor component such as a silicon wafer, on one side only, while at the same time achieving a high throughput with incorporation as necessary into a continuous overall manufacturing process, it is proposed that the objects be arranged in full surface contact with the supports, which cover the objects completely or almost completely on their underside and which in turn comprise quartz glass in particular.