Metalization outside protective overcoat for improved capacitors and inductors

A thick layer of copper is formed on the outside the protective overcoat (PO) which protects an integrated circuit, and forms both an inductor and the upper electrode of a capacitor. Placing this layer outside the PO greatly reduces parasitic capacitances with the substrate in the devices.

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Bibliographische Detailangaben
Hauptverfasser: ARCH JOHN KENNETH, ERDELJAC JOHN P, HUTTER LOUIS NICHOLAS, KHATIBZADEH M. ALI
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A thick layer of copper is formed on the outside the protective overcoat (PO) which protects an integrated circuit, and forms both an inductor and the upper electrode of a capacitor. Placing this layer outside the PO greatly reduces parasitic capacitances with the substrate in the devices.