Back-plane for semiconductor device

A back-plane for a semiconductor device, includes an oxidized substrate, a metal film formed on the oxidized substrate forming a back-gate, a back-gate oxide formed on the back-gate, and a silicon layer formed on the back-gate oxide.

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Bibliographische Detailangaben
Hauptverfasser:	JONES ERIN CATHERINE, SOLOMON PAUL MICHAEL, TIWARI SANDIP, D'EMIC CHRISTOPHER PETER, CHAN KEVIN KOK
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A back-plane for a semiconductor device, includes an oxidized substrate, a metal film formed on the oxidized substrate forming a back-gate, a back-gate oxide formed on the back-gate, and a silicon layer formed on the back-gate oxide.