Modular high frequency integrated circuit structure

Disclosed is a manufacturable silicon-based modular integrated circuit structure having performance characteristics comparable to high frequency GaAs-based integrated circuit structures, comprising materials and made in process steps which are compatible with existing low cost silicon-based integrat...

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Bibliographische Detailangaben
Hauptverfasser: HARAME DAVID LOUIS, PICIACCHIO DAWN TUDRYN, MALINOWSKI JOHN CHESTER, BARTUSH THOMAS ADAM, VOLANT RICHARD PAUL, TESSLER CHRISTOPHER LEE
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Disclosed is a manufacturable silicon-based modular integrated circuit structure having performance characteristics comparable to high frequency GaAs-based integrated circuit structures, comprising materials and made in process steps which are compatible with existing low cost silicon-based integrated circuit processing.