Semiconductor device having a fuse layer

Semiconductor device having a fuse layer

A semiconductor device includes: an insulation layer; a fuse layer extending on the insulation layer in one direction and disconnected through light radiation to control a redundant circuit; a pseudo fuse layer on the insulation layer along at least one side of the fuse layer; another insulation lay...

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Bibliographische Detailangaben
Hauptverfasser: IWAMOTO TAKESHI, SUDA KAKUTARO, MOTONAMI KAORU, DOI HIDEKI, TOYOTA RUI, KAWABE KAZUHIDE, IDO YASUHIRO, KIMURA MASATOSHI, SEKIKAWA HIROAKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes: an insulation layer; a fuse layer extending on the insulation layer in one direction and disconnected through light radiation to control a redundant circuit; a pseudo fuse layer on the insulation layer along at least one side of the fuse layer; another insulation layer covering the fuse layer and the pseudo fuse layer; and a protection film formed on another insulation layer and having an opening in a region opposite to the fuse layer. Fuse layers having a spacing of less than 4 mum or 4.5 to 5.5 mum. Such a structure allows a semiconductor device with a fuse layer capable of being disconnected reliably and providing a smaller blow trace.