Combined enhanced shock load capability and stress isolation structure for an improved performance silicon micro-machined accelerometer
The present invention provides an acceleration sensor and an accelerometer having isolation structure formed using a bulk straight wall deep reactive ion etch process, whereby external stress sources are isolated from active accelerometer components.
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | The present invention provides an acceleration sensor and an accelerometer having isolation structure formed using a bulk straight wall deep reactive ion etch process, whereby external stress sources are isolated from active accelerometer components. |
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