Combined enhanced shock load capability and stress isolation structure for an improved performance silicon micro-machined accelerometer

The present invention provides an acceleration sensor and an accelerometer having isolation structure formed using a bulk straight wall deep reactive ion etch process, whereby external stress sources are isolated from active accelerometer components.

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Bibliographische Detailangaben
Hauptverfasser: LEONARDSON RONALD B, BLAKE GRAEME A
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:The present invention provides an acceleration sensor and an accelerometer having isolation structure formed using a bulk straight wall deep reactive ion etch process, whereby external stress sources are isolated from active accelerometer components.