Field effect transistor which can operate stably in millimeter wave band

In order to achieve an aspect of the present invention, in a field effect transistor, a compound semiconductor substrate has an active region, and a gate finger electrode is formed on the active region. Source and drain stripe electrodes are formed on the active region to sandwich the gate finger el...

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Bibliographische Detailangaben

1. Verfasser:	AKIBA YASUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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