Field effect transistor which can operate stably in millimeter wave band

In order to achieve an aspect of the present invention, in a field effect transistor, a compound semiconductor substrate has an active region, and a gate finger electrode is formed on the active region. Source and drain stripe electrodes are formed on the active region to sandwich the gate finger electrode apart from the gate finger electrode. An extended gate electrode is connected with the gate finger electrode and extended source and drain electrodes are connected with the source and drain stripe electrodes, respectively. A resistance section is provided between the gate finger electrode and the extended gate electrode in the transistor forming region.