Sidewalls for guiding the via etch

Sidewalls for guiding the via etch

A structure and method to direct the via 270 etch to the top of the interconnect 210, by using a sidewall layer 240, preferably. TiN, and thus preventing the etching down the side of the interconnect 210 and exposure of materials residing between the interconnects 210.

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Bibliographische Detailangaben
Hauptverfasser: ZIELINSKI EDEN M, BRENNAN KENNETH D, ALDRICH DAVID B, MCANALLY PETER S
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A structure and method to direct the via 270 etch to the top of the interconnect 210, by using a sidewall layer 240, preferably. TiN, and thus preventing the etching down the side of the interconnect 210 and exposure of materials residing between the interconnects 210.