Method to perform IDDQ testing in the presence of high background leakage current

Method to perform IDDQ testing in the presence of high background leakage current

A method for IDDQ testing to detect defects in a semiconductor device in the presence of a high background leakage current. At least a portion of a semiconductor device is biased and a first quiescent current measurement is taken. The measured portion of the semiconductor device is then unbiased and...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: MILLER ANTHONY C
Format: Patent
Sprache:eng
Schlagworte:
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method for IDDQ testing to detect defects in a semiconductor device in the presence of a high background leakage current. At least a portion of a semiconductor device is biased and a first quiescent current measurement is taken. The measured portion of the semiconductor device is then unbiased and a second quiescent current measurement is taken. The first and second quiescent currents are then compared to determine if a defect exists in the tested portion of the semiconductor device.