DRAM cell capacitor having hemispherical grain silicon on a selected portion of a storage node

A DRAM cell capacitor is provided, having HSG (hemispherical grain) silicon disposed on a selected portion of a storage node. The capacitor resembles a solid cylindrical configuration having a top portion, a side wall, and a top edge portion sloped downward from the top portion to the side wall. HSG...

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Bibliographische Detailangaben
Hauptverfasser: NAM SEOK WOO, SHIN JIUL, HAN MIN-SEOG, LEE HYUNG-SEOK
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A DRAM cell capacitor is provided, having HSG (hemispherical grain) silicon disposed on a selected portion of a storage node. The capacitor resembles a solid cylindrical configuration having a top portion, a side wall, and a top edge portion sloped downward from the top portion to the side wall. HSG silicon is disposed only on the top portion and the side wall, but not on the sloped top edge portion.