Method to prevent oxygen out-diffusion from BSTO containing micro-electronic device

Method to prevent oxygen out-diffusion from BSTO containing micro-electronic device

In a method of forming a microelectronic structure of a Pt/BSTO/Pt capacitor stack for use in a DRAM device, the improvement comprising substantially eliminating or preventing oxygen out-diffusion from the BSTO material layer, comprising:a) preparing a bottom Pt electrode formation;b) subjecting the...

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Hauptverfasser: LEE HEON, PARK YOUNG-JIN, ATHAVALE SATISH, SIM JAI-HOON, LEE KILHO, LEE BRIAN, LIMB YOUNG
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator LEE HEON
PARK YOUNG-JIN
ATHAVALE SATISH
SIM JAI-HOON
LEE KILHO
LEE BRIAN
LIMB YOUNG
description In a method of forming a microelectronic structure of a Pt/BSTO/Pt capacitor stack for use in a DRAM device, the improvement comprising substantially eliminating or preventing oxygen out-diffusion from the BSTO material layer, comprising:a) preparing a bottom Pt electrode formation;b) subjecting the bottom Pt electrode formation to an oxygen plasma treatment to form an oxygen enriched Pt layer on the bottom Pt electrode;c) depositing a BSTO layer on said oxygen enriched Pt layer;d) depositing an upper Pt electrode layer on the BSTO layer;e) subjecting the upper Pt electrode layer to an oxygen plasma treatment to form an oxygen incorporated Pt layer; andf) depositing a Pt layer on the oxygen incorporated Pt layer upper Pt elect.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method to prevent oxygen out-diffusion from BSTO containing micro-electronic device
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