Method to prevent oxygen out-diffusion from BSTO containing micro-electronic device

In a method of forming a microelectronic structure of a Pt/BSTO/Pt capacitor stack for use in a DRAM device, the improvement comprising substantially eliminating or preventing oxygen out-diffusion from the BSTO material layer, comprising:a) preparing a bottom Pt electrode formation;b) subjecting the bottom Pt electrode formation to an oxygen plasma treatment to form an oxygen enriched Pt layer on the bottom Pt electrode;c) depositing a BSTO layer on said oxygen enriched Pt layer;d) depositing an upper Pt electrode layer on the BSTO layer;e) subjecting the upper Pt electrode layer to an oxygen plasma treatment to form an oxygen incorporated Pt layer; andf) depositing a Pt layer on the oxygen incorporated Pt layer upper Pt elect.