Backmetal drain terminal with low stress and thermal resistance

Backmetal drain terminal with low stress and thermal resistance

A semiconductor device includes a source region and a gate disposed at the upper surface of a silicon substrate, which includes a drain region for the device. On the lower surface of the substrate is disposed a backmetal drain terminal comprising a stack that includes a first layer of tantalum and a...

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Bibliographische Detailangaben
Hauptverfasser: CUMBO JOSEPH LEONARD, GREBS THOMAS EUGENE, LAUFFER JEFFREY EDWARD, RIDLEY, SR. RODNEY SYLVESTER, SPINDLER JEFFREY P
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a source region and a gate disposed at the upper surface of a silicon substrate, which includes a drain region for the device. On the lower surface of the substrate is disposed a backmetal drain terminal comprising a stack that includes a first layer of tantalum and an outermost second layer of copper.