Method to reduce overhead time in an ion metal plasma process

The present invention provides a method of reducing the overhead time associated with a high density ion metal plasma process. The method provides flowing a gas at a first flow rate and exhausting the chamber at a constant rate so that the rate at which gases are exhausted from the chamber at a stea...

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Bibliographische Detailangaben
1. Verfasser:	NGAN KENNY KING-TAI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention provides a method of reducing the overhead time associated with a high density ion metal plasma process. The method provides flowing a gas at a first flow rate and exhausting the chamber at a constant rate so that the rate at which gases are exhausted from the chamber at a steady state equals the flow rate of gases into the chamber. Another method provides flowing a gas at a first rate and then at a second flow rate which is about equal to the rate at which the gas is exhausted from the chamber at a steady state.