Polybenzoxazole resin and precursor thereof

Heat resistant polybenzoxazole resins useful as layer insulation films and protective films for semiconductor, layer insulation films for multilayer circuits, cover coats for flexible copper-clad sheets, solder resist films, liquid crystal-aligned films and the like. These resins have excellent ther...

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Bibliographische Detailangaben
Hauptverfasser:	NAKAJIMA MICHIO, TOKUHIRO MAKI, SAITO HIDENORI, WATANABE TSUYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PRINTED CIRCUITS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	Heat resistant polybenzoxazole resins useful as layer insulation films and protective films for semiconductor, layer insulation films for multilayer circuits, cover coats for flexible copper-clad sheets, solder resist films, liquid crystal-aligned films and the like. These resins have excellent thermal, electrical, physical and mechanical characteristics. Polybenzoxazole precursors are provided, represented by the general formula (A), and are used to obtain polybenzoxazole resins, represented by the general formula (D). In the formulas (A) and (D), n denotes an integer from 2-1000, and X denotes a structure having a formula selected from structures indicated at (B). In the formulas at (B), Y denotes a structure having a formula selected from those indicated at (C), and the hydrogen atom(s) on the benzene ring in these structures are optionally substituted.