Apparatus and process for growing silicon epitaxial layer

An apparatus and a process for growing a silicon epitaxial layer on a main surface of a silicon substrate wafer are disclosed. The apparatus and process provide a reactor and a gas feeder system. The gas feeder system utilizes an auxiliary dopant supply mass flow control (MFC) to provide an auxiliar...

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Bibliographische Detailangaben
1. Verfasser:	HAMILTON TODD A
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	An apparatus and a process for growing a silicon epitaxial layer on a main surface of a silicon substrate wafer are disclosed. The apparatus and process provide a reactor and a gas feeder system. The gas feeder system utilizes an auxiliary dopant supply mass flow control (MFC) to provide an auxiliary dopant only into a central injector that effects epitaxial deposition on the center of the wafer for autodoping correction. An auxiliary bellows metering valve is provided between the auxiliary MFC and the center injector to absorb pressure variations in the central flow line to prevent the pressure variations from reaching the auxiliary MFC. This results in a stable and consistent dopant concentration and resistivity profile.