Pasting layer formation method for high density plasma deposition chambers

The present invention provides a method of reducing particles within a deposition chamber without affecting bias voltage repeatability in subsequently processed wafers. Particularly, it has been discovered that within a high density plasma deposition chamber, the first wafer processed following deposition of a pasting layer may exhibit inconsistent quality as compared to subsequently processed wafers. It has further been discovered that such altered quality arises due to inconsistent bias voltage coupling between a wafer support and a wafer positioned thereon. To maintain consistent bias voltage coupling a transitional layer is deposited within the deposition chamber as part of the pasting process. It is believed the transitional layer affects the chamber's environment (chamber surfaces and atmosphere) which in turn affects bias voltage coupling between the wafer support and a wafer positioned thereon. Preferably the transitional layer is the same layer deposited on production wafers. Most preferably the present inventive process is employed within a high density plasma deposition chamber configured to deposit titanium-nitride and the inventive process deposits a titanium pasting layer followed by a transitional layer of titanium-nitride deposited by a high density plasma deposition technique, on a non-production object.