Melting pot with silicon protective layers, method for applying said layer and the use thereof

PCT No. PCT/EP98/00333 Sec. 371 Date Aug. 4, 1999 Sec. 102(e) Date Aug. 4, 1999 PCT Filed Jan. 22, 1998 PCT Pub. No. WO98/35075 PCT Pub. Date Aug. 13, 1998The invention relates to melting pots provided with silicon protective layers, a process for applying the silicon protective layer and the use th...

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Bibliographische Detailangaben
Hauptverfasser:	GATZWEILER, HEINZ, LANGE, HORST, KRUMBE, WOLFGANG
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY CRYSTAL GROWTH GLASS JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:	PCT No. PCT/EP98/00333 Sec. 371 Date Aug. 4, 1999 Sec. 102(e) Date Aug. 4, 1999 PCT Filed Jan. 22, 1998 PCT Pub. No. WO98/35075 PCT Pub. Date Aug. 13, 1998The invention relates to melting pots provided with silicon protective layers, a process for applying the silicon protective layer and the use thereof.