Low resistance poly landing pad

A method is disclosed for forming a low resistance poly landing pad which is achieved by shunting the polysilicon of a landing pad with metallic conductors. A window is opened through a first dielectric layer to expose a conducting region over a semiconductor substrate. A metallic layer, deposited o...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHUANG, KUN-JUNG, CHEN, YI-TE, LUI, HON-HUNG, HSU, SHOU-YI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!