Low resistance poly landing pad

A method is disclosed for forming a low resistance poly landing pad which is achieved by shunting the polysilicon of a landing pad with metallic conductors. A window is opened through a first dielectric layer to expose a conducting region over a semiconductor substrate. A metallic layer, deposited overall, is followed by an overall deposition of a polysilicon layer, with the layers being sufficient to fill the window completely. Metal and polysilicon outside the window is removed by chemical/mechanical polishing which also provides global planarization. Salicidation provides a silicide cover over the exposed surface of polysilicon, which was formed by the polishing. A second dielectric is deposited and an opening is formed to the landing pad. Electrical contact is made between metallization on the second dielectric layer and the salicide of the landing pad either, directly by simultaneous deposition of the metallization on the dielectric and the landing pad, or, by first forming a plug in the opening and then depositing the metallization.