Single crystal sic and method of producing the same

Single crystal sic and method of producing the same

PCT No. PCT/JP98/02197 Sec. 371 Date Dec. 29, 1998 Sec. 102(e) Date Dec. 29, 1998 PCT Filed May 20, 1998 PCT Pub. No. WO98/53125 PCT Pub. Date Nov. 26, 1998According to the present invention, a complex (M) which is formed by growing a polycrystalline beta -SiC plate 2 on the surface of a single crys...

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Bibliographische Detailangaben
Hauptverfasser: TANINO, KICHIYA
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:PCT No. PCT/JP98/02197 Sec. 371 Date Dec. 29, 1998 Sec. 102(e) Date Dec. 29, 1998 PCT Filed May 20, 1998 PCT Pub. No. WO98/53125 PCT Pub. Date Nov. 26, 1998According to the present invention, a complex (M) which is formed by growing a polycrystalline beta -SiC plate 2 on the surface of a single crystal alpha -SiC base material 1 by the thermal CVD method is heat-treated at a high temperature of 1,900 to 2,400 DEG C., whereby polycrystals of the polycrystalline cubic beta -SiC plate are transformed into a single crystal, so that the single crystal is oriented in the same direction as the crystal axis of the single crystal alpha -SiC base material and integrated with the single crystal of the single crystal alpha -SiC base material to be largely grown. As a result, single crystal SiC of high quality which has a very reduced number of lattice defects and micropipe defects can be efficiently produced while ensuring a sufficient size in terms of area.